50pcs Aod417 D417 P Ch Enhancement Mode Field Eff Aod417,d417 p ch enhancement mode field effect transistor,fet,mosfet brief content visible, double tap to read full content. full content visible, double tap to read brief content. Aod417 rohs rev0. aod417. p channel enhancement mode field effect transistor. general description. the aod417 uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. with the excellent thermal resistance of the dpak package, this device is well suited for high current load applications.
50 Pcs Aod417 To 252 D417 P Channel Enhancement Mode Fi 50 pcs aod417 to 252 d417 p channel enhancement mode field effect transistor #w4. P channel enhancement mode field effect transistor ndt2955 general description this 60 v p−channel mosfet is produced using onsemi’s high voltage trench process. it has been optimized for power management plications. features • −2.5 a, −60 v ♦ rds(on) = 300 m @ vgs = −10 v ♦ rds(on) = 500 m @ vgs = −4.5 v. Ndp6020p p channel logic level enhancement mode field effect transistor. ndp6020p ndb6020p. p channel logic level enhancement mode. general description features. these logic level p channel enhancement 24 a, 20 mode = v.0.05 @power r gs= v w. ds(on) 4.5 field v. effect transistors on are semiconductor's produced using r = 0.07w. P channel enhancement mode field effect transistor product summary v ds 60 v i d 0.17 a r ds(on) ( at v gs = 10v) ＜8 ohm r ds(on) ( at v gs = 4.5v) ＜9.9 ohm general description trench power lv mosfet technology low r ds(on) low gate charge moisture sensitivity level 1.
Jual Aod417 D417 Aod 417 Ao D417 P Channel Field Effect Ndp6020p p channel logic level enhancement mode field effect transistor. ndp6020p ndb6020p. p channel logic level enhancement mode. general description features. these logic level p channel enhancement 24 a, 20 mode = v.0.05 @power r gs= v w. ds(on) 4.5 field v. effect transistors on are semiconductor's produced using r = 0.07w. P channel enhancement mode field effect transistor product summary v ds 60 v i d 0.17 a r ds(on) ( at v gs = 10v) ＜8 ohm r ds(on) ( at v gs = 4.5v) ＜9.9 ohm general description trench power lv mosfet technology low r ds(on) low gate charge moisture sensitivity level 1. Features. high density cell design for ultra low rds(on) high speed switching. esd protected up to 2.5kv (hbm) trench power lv mosfet technology. flammability. atingmoisture sensitivity. evel 1halogen free. “green” device (note 1)lead free finish ro. s compliant ("p" suffix d. 50pcs aod417,d417 p ch enhancement mode field effect transistor,fet,mosfet : amazon.ca: industrial & scientific.
Aod417 Datasheet Pdf Alpha Omega Semiconductors Features. high density cell design for ultra low rds(on) high speed switching. esd protected up to 2.5kv (hbm) trench power lv mosfet technology. flammability. atingmoisture sensitivity. evel 1halogen free. “green” device (note 1)lead free finish ro. s compliant ("p" suffix d. 50pcs aod417,d417 p ch enhancement mode field effect transistor,fet,mosfet : amazon.ca: industrial & scientific.
Aod417 P Channel Enhancement Mode Field Effect Transistor
Comments are closed.