Mdd Mdd3401 Smd 30v P Channel Enhancement Mode Mo All devices are packed in accordance with eia standard rs 481 a and specifications. 30v p channel enhancement mosfet case sot 23 3 part code: mdd3401a00s0r1 15 nextgen components, inc. sales@nextgencomponent nextgencomponent 4 8 2024 item symbol tolerance sot 23 3. 30v p channel enhancement mode mosfet mdd3401 1 5 equivalent circuit absolute maximum ratings (ta=25℃unless otherwise noted) parameter symbol value unit drain source voltage vds 30 v gate source voltage vgs ±12 v continuous drain current id 4.2 a power dissipation(note 2) pd 1.2 w.
Mdd3401 Mdd Microdiode Electronics Mosfets Jlcpcb Mosfets automotive p channel 60 v (d s) 175c mosfet powerpak so 8l, 12.1 mohm a. 10v, 22.5 mohm a. 4.5v learn more about vishay siliconix vishay siliconix sqja mosfets datasheet. Ratings are based on low frequency and duty cycles to keep initial tj =25°c. the maximum current rating is package limited. r ja is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch2 with 2oz.square pad of copper. 30v p channel enhancement mode mosfet voltage 30 v current 25 a dfn5060 8l r features r ds(on), v gs @ 10v, i d @ 4a<30mΩ ds(on), v gs @ 4.5 , i d 2a<45mΩ high switching speed improved dv dt capability low gate charge low reverse transfer capacitance lead free in compliance with eu rohs 2.0. P channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25°c 16v 39mΩ @ v = 4.5v 2.5a 52mΩ @ v gs = 2.5v 2.1a 65mΩ @ v gs = 1.8v 1.8a description and applications this mosfet is designed to minimize the on state resistance (r ds(on)) and yet maintain superior switching performance, making it.
Mdd3401 Mddпј Microdiode Electronicsпј C427383 Lcsc Electronics 30v p channel enhancement mode mosfet voltage 30 v current 25 a dfn5060 8l r features r ds(on), v gs @ 10v, i d @ 4a<30mΩ ds(on), v gs @ 4.5 , i d 2a<45mΩ high switching speed improved dv dt capability low gate charge low reverse transfer capacitance lead free in compliance with eu rohs 2.0. P channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25°c 16v 39mΩ @ v = 4.5v 2.5a 52mΩ @ v gs = 2.5v 2.1a 65mΩ @ v gs = 1.8v 1.8a description and applications this mosfet is designed to minimize the on state resistance (r ds(on)) and yet maintain superior switching performance, making it. Zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa. zetex (asia) ltd 3701 04 metroplaza tower 1 hing fong road, kwai fong hong kong. zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom. telefon: (49) 89 45 49 49 0 telephone: (1) 631 360 2222 telephone: (852) 26100 611 telephone (44) 161 622 4444. Avani electronics offering mdd mdd3401 smd 30v p channel enhancement mode mosfet,mosfet module in ahmedabad, gujarat. also get power mosfet module price list from verified companies | id: 2850655945673.
Ao3401 A19t Sot23 Smd Mosfet Mdd P Channel 30v 4a вђ Emerging Te Zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa. zetex (asia) ltd 3701 04 metroplaza tower 1 hing fong road, kwai fong hong kong. zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom. telefon: (49) 89 45 49 49 0 telephone: (1) 631 360 2222 telephone: (852) 26100 611 telephone (44) 161 622 4444. Avani electronics offering mdd mdd3401 smd 30v p channel enhancement mode mosfet,mosfet module in ahmedabad, gujarat. also get power mosfet module price list from verified companies | id: 2850655945673.
Enhancement Mode Mosfet Operation Characteristics Basics
Comments are closed.